| PART |
Description |
Maker |
| M45PE40 M45PE40-VMN6G M45PE40-VMN6P M45PE40-VMN6TG |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M45PE80 M45PE80-VMN6G M45PE80-VMN6P M45PE80-VMN6TG |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M25PE2007 M25PE20-VMN6G M25PE20-VMN6P M25PE20-VMN6 |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M25PE80-VMW6G |
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout
|
STMicroelectronics
http://
|
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
